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Showing 1 to 1 of 1 for “"AlN bandgap bowing"”.
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A tight-binding analysis of the electronic properties of III-nitride semiconductors
… and compare it to experiment as well as fitting bowing parameters to the band gap as well as to the conduction band and valence band edges. We also investigate the wavefunction character of the valence band edge to determine the composition at which the optical polarisation switches in Al1_xGaxN …