Global ETD Search
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Showing 1 to 5 of 5 for “"AlInN"”.
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GaN heterojunction FET device Fabrication, Characterization and Modeling
… and sheet density were achieved. Second, the AlInN barrier HFET was successfully processed, with which we obtained improved I-V characteristics compared with conventional structure. The lattice-matched AlInN barrier is beneficial in the removal of strain, which leads to better carrier …
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Low Dislocation Density Gallium Nitride Templates and Their Device Applications
… GaN templates, nearly lattice matched AlInN/AIN/GaN HFETs were successfully demonstrated and exhibited ∼ 1600 cm2/Vs and 17 600 cm2/Vs Hall mobilities at 300 K and 10 K, respectively. Those mobility values are much higher than literature reports and indicate that high quality HFETs can …
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Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
… ternary barrier layer, such as AlGaN or AlInN, allows the realization of a so-called two-dimensional electron gas (2DEG) at the GaN interface. Even without further doping and only due to polarisation induced carriers, an approximately triangular quantum well in the GaN buffer can be …
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Þekking og notkun á örnefnum : Könnun gerð meðal sambýlisfólks í Hvítársíðu.
… þar sem annar aðilinn er aðfluttur en hinn alinn upp á viðkomandi jörð. Hinsvegar var kannað hvort örnefni væru enn að verða til og hver væri helsta ógn örnefnanna að mati viðmælanda. Könnunin var framkvæmd í Hvítársíðu í Borgarfirði og tóku átta pör á sjö bæjum þátt. Valin voru af handahófi …
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Overcoming Longstanding Synthesis Challenges Toward Realizing the Full Device Potential of III-Nitride Semiconductors
… to contribute to phase separation in InGaN, AlInN, and even AlGaN. This revised definition of phase separation in III-nitrides is discussed as needing further examination experimentally, theoretically, or both. The range of growth conditions for MME is much larger than for MOCVD or MBE, and …