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Showing 1 to 3 of 3 for “"AlInAs"”.
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Micro-transfer print integration of high-speed photodetectors to SOI platform
… for the first time, a combination of InGaAs and AlInAs as release layers for InP based devices yielding double the etch rate and almost isotropic etch compared to individual release layers (InGaAs or AlInAs). This facilitates direct bonding of the PD coupons to the target wafer since the …
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Leakage gate current in a heterostructure field effect transistor
… and AlGaAs/GaAs based HIGFET structures. For the AlInAs/GaInAs system, the calculated leakage currents are within a factor of 10 of the experimental values for most of the voltage range of study. This is more accurate than the results obtained in earlier literature, where the currents are off by …
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Entwurf und Charakterisierung von Quantenkaskadenlasern
… Entwurf und der <br>Charakterisierung von GaInAs/AlInAs/InP-basierten Quantenkaskadenlasern. <br>Insbesondere wurde der Fragestellung nachgegangen, welche grundlegenden <br>physikalischen Mechanismen die Lasertätigkeit dieser unipolaren Bauelemente zu <br>kleinen Emissionswellenlängen hin …