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Showing 1 to 3 of 3 for “"AlGaN/GaN high electron mobility transistor (HEMT)"”.
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Gallium Nitride-Based HEMT Devices Modeling and Performance Characterization
The AlGaN/GaN high electron mobility transistor (HEMT) is a promising candidate for microwave applications due to its high power and low noise characteristics at such frequencies. As a result of improved material growth and processing technologies, microwave power densities have been demonstrated …
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Development of high-performance GaN-based power transistors
… a comprehensive study on the development of GaN-based high-power transistors. First, selective area growth by plasma-assisted molecular beam epitaxy, a technology developed by our group for Ohmic contact improvement, is utilized to fabricate large-periphery AlGaN / GaN high electron mobility …
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Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy
… of the PAMBE-SAG technique to fabrication of high-power GaN-based switching HEMTs. First, a detailed study of the efficacy of SAG was conducted by comparing it with ion-implantation, a popular technique for improving Ohmic contacts. A consistent improvement in device performance by SAG was …