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Showing 1 to 12 of 12 for “"AlGaN/GaN heterostructure"”.
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Process Development and Characterization of AlGaN/GaN Heterostructure Field-Effect Transistors
The fabrication of AlGaN/GaN HFETs entailed first developing fundamental processing techniques such as isolation etching, low-resistance drain/source ohmic contacts, and Schottky gate formation. These efforts along with related processing issues will be discussed. Devices were then fabricated on …
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Fabrication and characterization of AlGaN/GaN high electron mobility transistors
… of this work was to fabricate and characterize AlGaN/GaN HEMTs on sapphire and silicon substrates. For this reason the HEMT fabrication technology had to be developed and optimized on AlGaN/GaN heterostructures grown on sapphire and silicon substrates. The optimization of AlGaN/GaN …
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Foundations of Ohmic Contact Formation on Aluminum Gallium Nitride/gallium Nitride Heterostructures
Aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) have tremendous potential for application in high frequencies, high temperatures and microwave and mm power amplifications. Fabrication of Ohmic contacts for such devices that meet the stringent …
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GaN-on-Silicon HEMTs and Schottky diodes for high voltage applications
Gallium Nitride (GaN) is considered a very promising material for use in the field of power devices as its application in power systems would result in a significant increase in the power density, reduced power losses, and the potential to operate at high frequencies. The wide bandgap of the …
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Dynamic ON-resistance in high voltage GaN field-effect-transistors
… Si-based power electronics system being matured, GaN Field-Effect-Transistors have emerged as a disruptive technology with great potential that arises from the outstanding material properties of GaN. However, in spite of great progress in GaN device fabrication, electrical reliability and a number …
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AlGaN/GaN MBE 2DEG heterostructures : interplay between surface-, interface- and device-properties
… In comparison to conventional AlGaAs/GaAs heterostructures the AlGaN/GaN material system offers new properties, which are suitable for HEMT (High Electron Mobility Transistor) device application. The aim of the work was to optimize the growth of AlGaN/GaN HEMT structure on different …
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Gate-geometry Dependence of Enhancement-mode p-GaN Gate High Electron Mobility Transistors
While GaN-based transistors for power electronics have in many situations demonstrated technological superiority over conventional Si based devices, the development of GaN power electronics has only scratched the surface of the possibilities that lie ahead. The most promising device structure for …
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Microcantilever Based Potentiometric Sensors For Harsh Environment Applications
… 2DGS of ~75 meV/ % change while volatile organic compounds like acetone, ammonia and methanol showed negative 2DGS of -110, -45 and -13 meV/ % respectively. Separate potentiometric experiments on 6H-SiC epilayers reveal that NO<sub>2</sub> is responsible for surface electron affinity change …
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Physics and Engineering of Photoelectric Tunable-step Terahertz Detectors Based on High Mobility III-V Semiconductor Structures
… including antenna geometry, material, heterostructure design, operating temperature, illumination condition, etc., is systematically investigated for room-temperature PETS THz detectors with high responsivity and fast response speed. Firstly, a systematic study on AlGaAs/GaAs-based PETS …
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New process approaches to metalorganic vapor phase epitaxy of III-nitrides for high power HEMTs
… candidate for future microwave power devices, GaN-based high-electron mobility transistors (HEMTs) have attracted much research interest. However, group III-nitride growth related issues – predominantly the high defect densities due to lacking lattice matched substrates – limit the quality and …
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Aspectos estructurales, deformación y superficies en relación con la fiabilidad de transistores de alta movilidad electrónica basados en heteroestructuras de AlGaN/GaN
… y detallada, en múltiples heteroestructuras de AlGaN/GaN crecidas sobre sustratos diferentes (SiC, zafiro y silicio) por técnicas de crecimiento epitaxial similares (MBE y MOVPE). El conocimiento de la heteroestructura es fundamental para realizar simulaciones de los principales parámetros y …
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Procédés de gravure à faible endommagement des surfaces : application à la gravure SiN sur AlGaN/GaN pour les transistors à haute mobilité électronique
Les semi-conducteurs en Nitrure de Gallium (GaN), constituent des matériaux prometteurs pour la fabrication de transistors à haute mobilité électronique (HEMT) pour les prochaines générations de dispositifs de puissance, grâce à leurs propriétés physiques exceptionnelles adaptées aux applications à …