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Showing 1 to 2 of 2 for “"AlGaN/GaN HFET"”.
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AlGaN/GaN HFET with composite 'slow/fast' gate
<p>The remarkable properties of AlGaN/GaN heterojunction field effect transistors (HFET) include a record high-density two dimensional electron gas (2DEG) channel, high breakdown fields, temperature stability and chemical robustness. Radio Frequency (RF) switches based on such HFETs demonstrate …
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Microcantilever Based Potentiometric Sensors For Harsh Environment Applications
… 2DGS of ~75 meV/ % change while volatile organic compounds like acetone, ammonia and methanol showed negative 2DGS of -110, -45 and -13 meV/ % respectively. Separate potentiometric experiments on 6H-SiC epilayers reveal that NO<sub>2</sub> is responsible for surface electron affinity change …