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Showing 1 to 1 of 1 for “"AlGaN/GaN HEMT, Si(111), high-speed electronics"”.
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Atomic layer deposition Al2O3-passivated AlGaN/GaN high-electron-mobility transistors on Si(111) towards reliable high-speed electronics
(Al)GaN-based transistors are the backbones of next-generation high power/frequency electronics. However, various challenges with this exciting technology still necessitate more comprehensive investigations. In particular, epitaxially growing high-quality (Al)GaN layers on foreign substrates, …