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Showing 1 to 20 of 79 for “"AlGaN/GAN"”.
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AlGaN/GaN-based power semiconductor switches
AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and charge density. The ability to grow these devices on large-diameter Si wafers …
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AlGaN/GaN heterostructures for enhancement mode transistors
… a larga banda, come il nitruro di gallio (GaN) e le relative leghe, hanno mostrato eccellenti proprietà fisiche. Un aspetto interessante legato al GaN è la possibilità di crescere eterostrutture AlGaN/GaN, in cui si forma un gas bidimensionale di elettroni (2DEG). Basandosi sulla …
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AlGaN/GaN HFET with composite 'slow/fast' gate
<p>The remarkable properties of AlGaN/GaN heterojunction field effect transistors (HFET) include a record high-density two dimensional electron gas (2DEG) channel, high breakdown fields, temperature stability and chemical robustness. Radio Frequency (RF) switches based on such HFETs demonstrate …
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Processing technology for high quality AlGaN/GaN MOSHEMT interfaces
Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) are very promising for applications requiring high power and high operating frequencies due to its intrinsic material properties like the high electron mobility, large critical electric field and large carrier concentration. For …
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Fabrication and characterization of AlGaN/GaN high electron mobility transistors
… of this work was to fabricate and characterize AlGaN/GaN HEMTs on sapphire and silicon substrates. For this reason the HEMT fabrication technology had to be developed and optimized on AlGaN/GaN heterostructures grown on sapphire and silicon substrates. The optimization of AlGaN/GaN …
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Self-aligned AlGaN/GaN transistors for sub-mm wave applications
… work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source and drain access resistance. The eventual fabrication of self-aligned transistors required …
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Fabrication and characterization of advanced ALGaN/GaN high-electron-mobility transistors
… to enhance the electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Chapter 2 reports the development of in situ vacuum anneal and SiH4 or SiH4+NH3 passivation to realize high quality metal gate/high-k dielectric stacks on GaN …
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Process Development and Characterization of AlGaN/GaN Heterostructure Field-Effect Transistors
The fabrication of AlGaN/GaN HFETs entailed first developing fundamental processing techniques such as isolation etching, low-resistance drain/source ohmic contacts, and Schottky gate formation. These efforts along with related processing issues will be discussed. Devices were then fabricated on …
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AlGaN/GaN MOSHFETs using ALD Dielectrics: A Study in Performance and Reliability.
North Carolina State University Theses Electrical and Computer Engineering.
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AlGaN/GaN MBE 2DEG heterostructures : interplay between surface-, interface- and device-properties
… to conventional AlGaAs/GaAs heterostructures the AlGaN/GaN material system offers new properties, which are suitable for HEMT (High Electron Mobility Transistor) device application. The aim of the work was to optimize the growth of AlGaN/GaN HEMT structure on different substrates and to study the …
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Substrate Impurity Incorporation Mitigation for Improved AlGaN/GaN-ON-Si RF Performance
… detrimental as it is capacitively coupled to the GaN HEMT 2DEG channel. Moreover, the presence of significant lattice mismatch and thermal mismatch between the AlN nucleation layer and Si leads to a very large threading dislocation density (TDD) within the AlN layer thereby creating a leakage …
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Thermal Performance of AlGaN/GaN Based Power Switching Devices for Transformerless Inverters
… like Silicon Carbide (SiC), Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) have superior material properties as compared to Silicon (Si) like higher electrical breakdown voltages and bandgap energies as well as lower leakage currents as compared to Si which make them ideal to …
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Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors
Gallium Nitride (GaN) belongs to a class of materials called wide band-gap semiconductors. In recent years, the versatile nature of this material has been exploited for a wide range of applications from solid state lighting to RF and microwave communication, as well as high power switching. The …
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Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs
AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high power and high frequency applications. However, the poor long term …
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Fabrication and characterisation of AlGaN/GaN high electron mobolity transistors for power applications
… though this work presents a major progress in GaN-based material system and processing there are still questions related especially to long-term reliability (in months and years), which have to be answered. The reliability also seems to be the last barrier before industrial production of …
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AlGaN/GaN Dual Channel HFETs and Realization of GaN Devices on different substrates
GaN-based HFETs demonstrate ubiquitous high power and high frequency performance and attract tremendous research efforts. Even though significant advances have been achieved, there still exist some critical issues needed to be investigated and solved. In particular, high defect densities due to …
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Advanced process development for contacts to algan/gan high electron mobility transistors (HEMTS)
… studied as Schottky metallizations to GaN and AlGaN/GaN heterostructures. Ni/Au, Ni/Pt/Au, Ir/Au, Ir/Pt/Au and Pt/Au Schottky diodes were fabricated on GaN and AlGaN/GaN substrates. Schottky barrier heights ranging from 0.8 to 0.9 eV were obtained as-deposited on GaN with ideality …
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Polymer-Supported Bridges for Multi-Finger AlGaN/GaN Heterojunction Field Effect Transistors (HFETs)
Current AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) make use of multiple sources, drains, and gates in parallel to maximize transconductance and effective gain while minimizing the current density through each channel. To connect the sources to a common ground, current practice …
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Einfluss der Schichteigenschaften auf das elektrische und optoelektrische Verhalten von AlGaN-GaN-HEMT-Transistoren
… expansion coefficients between gallium nitride (GaN) and its substrates like sapphire, silicon and silicon carbide is responsible for a high concentration of defects in AlGaN/GaN layers. The influence of these electrically active centres (traps) and their respective trapping effects are …
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