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Showing 1 to 2 of 2 for “"AlGaAs/GaAs heterostructure"”.

  1. Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels

    … NW research centers on the Au-catalyzed planar GaAs NW assembly discovered at the University of Illinois Urbana-Champaign (UIUC). The top-down NW research approach involves plasma etching of an emerging wide-bandgap material, Gallium Oxide (Ga2O3), to make arrays of NW channels (or fins) for …

    uiuc Repository record for Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels (opens in a new tab)

  2. Physics and Engineering of Photoelectric Tunable-step Terahertz Detectors Based on High Mobility III-V Semiconductor Structures

    … including antenna geometry, material, heterostructure design, operating temperature, illumination condition, etc., is systematically investigated for room-temperature PETS THz detectors with high responsivity and fast response speed. Firstly, a systematic study on AlGaAs/GaAs-based PETS …

    cambridge Repository record for Physics and Engineering of Photoelectric Tunable-step Terahertz Detectors Based on High Mobility III-V Semiconductor Structures (opens in a new tab)