Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 133 for “"AlGaAs"”.
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Femtosecond carrier dynamics in AlGaAs
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1994.
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Linearity of power AlGaAs/GaAs HBTs
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
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Femtosecond nonlinearities in AlGaAs diode laser amplifers
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
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GaAs/AlGaAs mid-infrared quantum cascade laser
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
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GaAs/AlGaAs far-infrared quantum cascade laser
In this thesis I investigated the feasibility of an optically pumped inter subband farinfrared (40-100[mu]m) laser, using GaAs/ AlxGal-xAs heterostructures. The proposed design aims to use LO-phonon-mediated depopulation of the lower THz laser level to aid the intersubband laser population …
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Thermal management in GaAs/AlGaAs laser diode structures
[ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI-COLUMBIA AT AUTHOR'S REQUEST.] Due to the advancement of nanotechnology, understanding the heat transport mechanism in nano-scale devices has become a crucial factor in describing the operation of the device. Laser diode structures have been the …
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Hydrodynamic and ballistic transport in high-mobility GaAs/AlGaAs heterostructures
… electron system in a GaAs quantum well in a GaAs/AlGaAs heterostructure. The hydrodynamic regime exhibits collective fluid-like behavior of electrons which leads to the formation of current vortices, attributable to the dominance of electron-electron interactions in this regime. The ballistic …
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Compact spectroscopic terahertz imaging solutions using GaAs/AlGaAs and InGaAs semiconductor nanostructures /
… THz source based on p-i-n-i -type GaAs/AlGaAs heterostructure was experimentally investigated for the first time. It is demonstrated that under certain excitation conditions by femtosecond optical pulses the emitter delivers more power than InGaAs and InAs surface emitters. As concerns a …
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Reliability and Mode Behavior of AlGaAs-GaAs-InGaAs Quantum Well Heterostructure Lasers
"Data are presented on oxide-confined AlxGa1_xAs-GaAs quantum well heterostructures with oxide-AlxGa1_xAs distributed Bragg reflectors for electromagnetic confinement, showing the full range of reliability after 5+ years of hydrolyzation in ambient conditions of atmospheric water vapor and …
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Desarrollo de fotodetectores bi-color de infrarrojos con pozos cuánticos de GaAs/AlGaAs
… de 8 a 12 pm sobre el sistema de materiales GaAs/AlGaAs. Esta Tecnología incluye todas las fases, desde el diseño, pasando por el crecimiento epitaxial y la fabricación, hasta la caracterización. El diseño de los detectores se lleva a cabo mediante el uso de herramientas de simulación que permiten …
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Quasi-two-dimensional phenomena at AlGaAs-GaAs heterointerfaces, multiple quantum wells and modulation-doped structures
This thesis describes a subset of phenomena at AIGaAs-GaAs heterointerfaces related to multiple quantum wells and modulation-doped structures. In the first section. two important results concerning multiple quantum well systems are described: optical absorption coefficients and exciton oscillator …
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SAW-driven single-photon sources and photon detectors fabricated on an undoped GaAs/AlGaAs quantum well
… and holes can be induced in an undoped GaAs/AlGaAs 15nm quantum well by gates to form a lateral n-i-p junction. The junction is confined into a quasi-1D channel laterally by etching and side gates. Light emission is observed when a 1 or 3 GHz SAW drives a current, by pumping electrons over …
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Design, growth and optimization of 2-μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs.
… the antimonide based active region and the GaAs/AlGaAs DBR. The challenge is therefore to reduce the threading dislocation density in the active region without a very thick metamorphic bu\u21b5er and this is achieved by inducing 90! interfacial misfit dislocation arrays between the GaSb and GaAs …
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Crecimiento por MBE, fabricación y caracterización de láseres de AlGaAs/GaAs/InGaAs/GaAs (111B) para emisión óptica menor a 1 nanometro
… de Haces Moleculares (MBE) de estructuras de AlGaAS/GaAS/InGaAS de baja dimensionalidad sobre substratos de GaAs (111)B con vistas a su aplicación en el desarrollo de dispositivos optoelectrónicos de configuración guía-onda conlongitudes de onda de trabajo mayores a 1 um, con especial atención …
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Growth of low disorder GaAs/AlGaAs heterostructures by molecular beam epitaxy for the study of correlated electron phases in two dimensions
<p>The unparalleled quality of GaAs/AlGaAs heterostructures grown by molecular beam epitaxy has enabled a wide range of experiments probing interaction effects in two-dimensional electron and hole gases. This dissertation presents work aimed at further understanding the key material-related issues …
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Wavelength dependence of the spectral linewidth of a grating-tuned CW single-frequency external-cavity strained quantum well InGaAs/AlGaAs Grinsch diode laser
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1994.
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