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Showing 1 to 5 of 5 for “"ALD Precursors"”.

  1. Precursors And Processes For The Growth Of Metallic First Row Transition Metal Films By Atomic Layer Deposition

    … devices, atomic layer deposition (ALD) has gained much attention in the recent years. ALD allows the deposition of ultra-thin conformal films with accurate thickness control due to the self-limiting growth mechanism. The microelectronics industry requires the growth of metallic …

    wayne-thes Repository record for Precursors And Processes For The Growth Of Metallic First Row Transition Metal Films By Atomic Layer Deposition (opens in a new tab)

  2. ENGINEERING STRUCTURE AND PHASE VIA TEMPERATURE MANIPULATION IN THIN FILM OXIDES GROWN BY ALD

    Atomic Layer Deposition (ALD) is a critical thin film deposition technology with applications spanning microelectronics, solar fuels and biological preservation due to its advantages of a wide precursor library for the majority of the periodic table, exquisite control over growth rates, and the …

    gatech Repository record for ENGINEERING STRUCTURE AND PHASE VIA TEMPERATURE MANIPULATION IN THIN FILM OXIDES GROWN BY ALD (opens in a new tab)

  3. New Chemistry For The Growth Of First-Row Transition Metal Films By Atomic Layer Deposition

    … current and future applications. By contrast, ALD is the favored approach for depositing films with absolute surface conformality and thickness control on 3D architectures and in high aspect ratio features. However, the low-temperature chemical reduction of most first-row transition metal …

    wayne-thes Repository record for New Chemistry For The Growth Of First-Row Transition Metal Films By Atomic Layer Deposition (opens in a new tab)

  4. Synthesis And Characterization Of Group 5 Metal Complexes Containing Pyrazolate, Amidate, And Related Ligands As Potential Precursors For Thin Film Growth By Atomic Layer Deposition

    <p>Atomic Layer Deposition (ALD) is an advanced variant of Chemical Vapor Deposition (CVD) and is used to deposit smooth and conformal thin films for applications in the microelectronics industry. ALD requires metal precursors that are sufficiently volatile and thermally stable at elevated …

    wayne-thes Repository record for Synthesis And Characterization Of Group 5 Metal Complexes Containing Pyrazolate, Amidate, And Related Ligands As Potential Precursors For Thin Film Growth By Atomic Layer Deposition (opens in a new tab)

  5. The Synthesis, Structure, And Properties Of Group 2 Poly(pyrazolyl)borates And Their Use For The Atomic Layer Deposition Of Group 2 Borates

    … for use as group 2 atomic layer deposition (ALD) precursors. In addition, a series of group 2 complexes containing BpR2-based ligand systems were synthesized. Treatment of MI2 (M = Ca, Sr, Ba) with two equivalents of TlBptBu2, KBp, and KBpiPr2 in tetrahydrofuran at ambient temperature …

    wayne-thes Repository record for The Synthesis, Structure, And Properties Of Group 2 Poly(pyrazolyl)borates And Their Use For The Atomic Layer Deposition Of Group 2 Borates (opens in a new tab)