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Showing 1 to 1 of 1 for “"A1GaN"”.
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III-nitride Semiconductors Grown By Plasma Assisted Molecular Beam Epitaxy
… metal-rich conditions, a lateral geometry GaN/A1GaN MQW-based photodetector was fabricated. It exhibited a flat and narrow spectral response in the range of 297~352 nm in the backillumination configuration.