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Showing 1 to 20 of 25 for “"4H-SiC"”.
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Advanced characterization of 4H-SiC MOSFET channel [Caratterizzazione avanzata del canale 4H-SiC MOSFET]
… ad alte prestazioni in carburo di silicio (SiC) rappresenta un passo fondamentale per l'avanzamento della moderna elettronica di potenza. Grazie all'ampio bandgap, all'elevata conducibilità termica e all'alto campo elettrico, il 4H-SiC è emerso come materiale chiave per dispositivi …
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4H-SiC FinFET devices and modelling
As a semiconductor material, Silicon Carbide (SiC) has promising electrical properties in high-voltage, high-frequency switching applications for various power electronics applications. In particular, SiC power MOSFETs have undergone remarkable development and optimisation, turning them into …
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Effects of ion irradiation on 4H- SiC p-n junction
The 4H-SiC is a wide bang gap semiconductor that for its properties such as the high hardness, the temperature stability, the chemical inertness and the high thermal conductivity is a promising material for devices operating in hostile environment such as radiation rich and high temperature. Ion …
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Dielettrici high-κ Al-based per 4H-SiC tramite Atomic Layer Deposition
Il carburo di silicio 4H (4H-SiC) è un semiconduttore ad ampio band gap che attira sempre maggiore attenzione per applicazioni in dispositivi elettronici ad elevata potenza o operanti ad alte temperature. In particolare, i metal-oxide-semiconductor field-effect transistors ottenuti su 4H-SiC …
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Characterization and Modeling of 4H-SiC Low Voltage MOSFETs and Power MOSFETs
… of low voltage and high voltage circuits on SiC has profound applications. SiC power devices have proved their superiority in terms of high temperature operation, faster switching frequencies and larger power densities when compared with Si power devices. The control of SiC power devices …
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Modelling and enhancement of the channel mobility of 4H-SiC power MOS devices
… to its advantageous electro-thermal properties, 4H-SiC has recently become very attractive as a semiconductor material for various power electronics applications. In particular, SiC power MOSFETs have turned into a serious competitor to more conventional Si unipolar and bipolar power devices …
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Metalizzazione su superfici di SiC: Contatti ohmici di Nisu 4H-SiC tramite processi laser
… ohmici sul lato posteriore dei dispositivi di SiC è particolarmente importante poiché una barriera ad alto potenziale tende a formarsi all'interfaccia tra la maggior parte dei metalli e il SiC. Ciò si traduce in un basso trasporto di corrente, una bassa velocità di commutazione e un aumento …
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Crescita epitassiale e caratterizzazione di un epi-layer spesso di 4H-SiC per la rivelazione di neutroni
… di uno spesso strato epitassiale di SiC 4H, precedentemente cresciuto, e un confronto dei risultati tra i campioni prima e dopo un processo di ossidazione termica effettuato a 1400 C per 48 ore. Attraverso spettroscopie Raman e fotoluminescenza (PL), sono stati valutati i tempi di …
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Comprehensive Analysis of Proton Irradiation Effects on 4H-SiC Power Devices: Characterization, Simulation, and Optimization for Enhanced Performance [Analisi completa degli effetti dell'irradiazione protonica sui dispositivi di potenza in 4H-SiC: caratterizzazione, simulazione e ottimizzazione per migliorarne le prestazioni]
… ad ampio band-gap come il carburo di silicio (SiC) e il nitruro di gallio (GaN). Tra questi, il 4H-SiC è emerso come un materiale di notevole interesse per le sue prestazioni superiori in applicazioni ad alta temperatura, alta potenza e alta frequenza. Questa tesi presenta uno studio completo …
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Growth and characterization of epitaxial graphene films by Molecular Beam Epitaxy
… metallic substrates and thermal decomposition of SiC are two such efforts in the direction of producing wafer-scale graphene films but none of these techniques are full-proof. While CVD graphene needs to be transferred from a metallic substrate to an insulating one for device applications, graphene …
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Pulsed laser ablation and micromachining of 4H and 6H SiC wafers for high-temperature MEMS sensors
… of the ablation behavior of single crystal 4H-SiC and 6H-SiC to improve the manufacturability and high-temperature performance of SiC based MEMS pressure sensors using laser applications. The ablation characteristics of both the polytypes were studied using pulsed lasers and micromachining …
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A High Temperature Reference Voltage Generator with SiC Transistors
… generator is designed and prototyped using 4H-SiC bipolar transistors. Silicon carbide (SiC) is a semiconductor material that exhibits wide bandgap, high dielectric breakdown field strength, and high thermal conductivity. Due to these properties, it is suitable for high-frequency, …
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Silicon Carbide sensors for the detection of Charged Particles and X-Rays [Sensori in Carburo di Silicio per la Rilevazione di Particelle Cariche e Raggi X]
… ambiti scientifici e tecnologici, tra cui la fisica nucleare e la medicina. I recenti progressi nella fisica dello stato solido hanno posto le basi per lo sviluppo di rivelatori a stato solido per radiazione ionizzante, caratterizzati da una risoluzione e un'efficienza di rilevazione superiori …
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High Growth Rate and High Purity Semi-Insulating Epitaxy Using Dichlorosilane For Power Devices
<p>Silicon Carbide (SiC) has long been considered a material of choice for high power and high frequency devices due to its wide band gap, high breakdown field, and high thermal conductivity. Chemical vapor deposition (CVD) of 4H-SiC using silane (SiH4) and light hydrocarbons e.g. propane (C3H8) or …
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Graphene Heterostructures with Wide Bandgap Semiconductors
… ampio bandgap (WBS), come il carburo di silicio (4H-SiC), il nitruro di gallio (GaN) e le relative leghe (AlxGa1-xN) ,peculiari per le loro proprietà superiori nell'ambito delle applicazioni in alta potenza e alta frequenza. Inizialmente, sono state affrontate le metodiche di fabbricazione e …
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Metal-assisted chemical etching of 4H silicon carbide
… substrates (Si, GaAs, InP, GaP, GaN, Ga2O3, and SiC) and catalysts (Au, Ag, Pt, Pd, graphene, Cu), each demonstrated with different degrees of anisotropy, porosity, and etching conditions. SiC has only ever been demonstrated to etch with a porous layer generated using a wet etching method. This …
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4H silicon carbide particle detectors: study of the defects induced by high energy neutron irradiation
… cope with such an environment. Silicon carbide (SiC), which has recently been recognized as potentially radiation hard, is now studied. In this work it was analyzed the effect of high energy neutron irradiation on 4H-SiC particle detectors. Schottky and junction particle detectors were irradiated …
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Optically Controlled High Power High Speed Wide Band Gap Devices
… materials. Specifically, optically controlled 4H-SiC junction devices have been demonstrated, modeled and analyzed. The behavior and response of different device types and geometries are discussed in terms of junction capacitances, inherent hole traps, optical intensity and absorption …
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