Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 18 of 18 for “"28 nm"”.
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Study and development of low power consumption SRAMs on 28 nm FD-SOI CMOS process
… analog circuit designs in CMOS nanometer (< 90 nm) nodes can be substantially affected by manufacturing process variations, circuit performance becomes more challenging to achieve efficient solutions by using analytical models. Extensive simulations are thus commonly required to provide a high …
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ESD circuit design and measurement techniques
… is then used to measure reverse recovery in a 65 nm CMOS ESD diode, and it is found that a quasi-static compact model does not accurately describe the observed transient. A non-quasi-static charge control model is used to accurately simulate both the reverse recovery and forward bias behavior. …
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Reducing data movement in multicore chips with computation and data co-scheduling
… than basic compute operations. For example, at 28 nm, a main memory access is 100x slower and consumes 1000x the energy of a floatingpoint operation, and moving 64 bytes across a 16-core processor is 50 x slower and consumes 20 x the energy. Without a drastic reduction in data movement, memory …
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Design, Characterization and Analysis of Component Level Electrostatic Discharge (ESD) Protection Solutions
… low capacitance is realized in a sub 3-V, 180-nm CMOS process. This ESD device is designed for a specific application where the operating voltage at the I/O is larger than that of the core circuit. For instance, protecting high voltage swing I/Os in CMOS data acquisition system (DAS) …
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Circuiti Elettronici Integrati per Applicazioni Battery-less IoT e Dispositivi Biomedici Impiantabili
… è implementato in una tecnologia CMOS bulk a 28 nm fornita da TSMC. Il Capitolo 2 presenta una revisione e una modellazione in Verilog-A di raddrizzatori attivi regolati, come argomento di grande attualità per IMD, per soluzioni di gestione dell'energia/potenza a minore area e maggiore …
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A Kinetic Study of Anti-VEGF-A Polyclonal Antibodies and Anti-VEGF-A ssDNA Aptamers
… aptamer had K<sub>D</sub> values of 20-28 nM and the anti-VEGF-A antibody had K<sub>D</sub> values of 16-127 uM. The binding efficacy of the aptamer was several orders of magnitude better than that of the antibody. The aptamer was also stable in solution for a longer amount of time than …
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A dot product kernel using rapidly switched analog circuit
… nodes. Simulations for the first design in a 130 nm process show energy savings of 19x to 32x compared to a digital implementation for signal-to-quantization-noise ratios (SQNRs) of 30 dB to 24 dB, respectively. Simulations for the second design in a 28 nm FDSOI process show energy savings of …
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Characterization and localization of a cyclic AMP dependant protein kinase from Dictyostelium discoideum
… regulatory subunit had identical cAMP Kds of 28 nM. Cyclic AMP was able to dissociate the subunits when analyzed by density gradient centrifugation. Histone VII-S activated the subunits in the absence of cAMP but did not produce their dissociation. In contrast to the gel filtration data, …
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Effects of vanadium microalloying of 1080 steel on pearlite transformation kinetics and microstructural development
… The 1080V steel had a finer pearlite ILS by 6-28 nm and a higher hardness by 15-20 HV, compared to the 1080 steel. Calculated yield strengths of the two steels indicated no apparent precipitation strengthening. APT revealed V clusters, with average diameters of approximately 2.6 nm, to form …
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Design Techniques for High-Performance SAR A/D Converters
… the unit capacitor to scale down to as low as 280aF for a 9-bit DAC. Since the CAP-DAC causes a large part of the overall dynamic power consumption and directly determines both the sizes of the driving and sampling switches and the size of the input capacitive load of the ADC and the kT/C noise …
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Modeling, design, and optimization of permanent magnet synchronous machines
… These pulsations in torque caused by magnet alignment with geometric features in the stator result in undesired vibrations and issues with control. One method, based on skew, for reducing or eliminating cogging torque is explored, and a simple analytical technique to predict the eect of skew is …
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An Analog Pixel Front-End for High Granularity Space-Time Measurements
L'abstract è presente nell'allegato / the abstract is in the attachment
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Multiple and Extended References in Fourier Transform Holography
… FTH erzielte die weitaus beste Auflösung von 130 nm. Das in dieser Arbeit betrachtete HERALDO-Muster besteht aus einer einzelnen Linie als Referenz. Die Referenzpunkte werden mathematisch in Form einer Ableitung entlang dieser Linie erzeugt, nachdem das Hologramm detektiert wurde. Die Auflösung …
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STRUCTURE–ACTIVITY RELATIONSHIP STUDIES OF HYBRID ANTITUMOR AGENTS FOR THE TREATMENT OF NON-SMALL CELL LUNG CANCER
… of the guanidinato group (verified by 195Pt NMR). Instead, platinum-mediated amidination chemistry afforded two amidine derivatives of PT-ACRAMTU (54 and 55) with greatly enhanced activity (IC50 values of 26 nM and 28 nM, respectively) in H460 non-small-cell lung cancer (NSCLC). The …
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Progettazione di circuiti analogici CMOS per applicazioni a bassissimo consumo di corrente e a bassissima tensione
… di nano-potenza senza resistenze CMOS da 160-nm con strategia di trimming. La soluzione è l'unica in letteratura in grado di coprire sia il più ampio range di tensione di alimentazione che di temperatura, rispettivamente da 1.2 a 5 V e da –40 a 125 °C. È stata misurata una tensione di …
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Phase Behavior and Structural Transitions in The Mixtures of Cationic Surfactants and Hydrophobic Counterions
… were polydisperse and ranged from 100 to 1000 nm in diameter. SANS detected the transition in the microstructure which was caused by changing the concentration of 2,1 HNC in the system. SANS calculations show results similar to that obtained by microscopic methods. Surprising rheological …
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Optimization for advanced lithography
… integrated circuit (IC) fabrication. Below the 28 nm technology node, conventional 193 nm immersion lithography (193i) with single exposure has reached its printability limit. In order to keep up with Moore's law, a lot of advanced lithography and process techniques have been coming up in the …
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MOLECULAR FACTORS THAT INFLUENCE THE BINDING OF AGONISTS TO AMPA RECEPTORS
… a high and low affinity components with KDs of 9-28 nM and 190-700 nM. Previous studies have suggested that newly synthesized receptors have high affinity and are converted to lower affinity by a secondary process. Two particular processes have been implicated, namely the conversion of receptor …