Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 25 for “"22 nm"”.
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A 2-D Scalable Third harmonic radiator at 291.3 GHz with -2 dBm of Radiated Power in 22 nm FinFET Technology
… The proposed radiator is implemented on Intel 22 nm FinFET (FFL) technology, which enables high-performance high-speed circuits. The presented radiator is an addition to the state-of-the-art radiators and combines several advantages of previous designs.
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A study of silicon and germanium junctionless transistors
… industry to extend Moore’s law beyond 130 nm technology nodes. New device structures and channel materials are highly demanded to keep performance enhancement when the device scales beyond 22 nm. In this work, the properties and feasibility of the proposed Junctionless transistor (JNT) have …
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Investigation of Ultra-Low Power CMOS GHz Circulator
… based on the previous work [1], with TSMC 65 nm technology and Intel 22 nm technology. The circuit was simulated for both at room temperature and at 4 K.
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Device and circuit-level models for carbon nanotube and graphene nanoribbon transistors
… nanometer dimension with the introduction of 90 nm high volume manufacturing in 2004. The latest technological advancement has led to a low power, high-density and high-speed generation of processor. Nevertheless, the scaling of the Si MOSFET below 22 nm may soon meet its’ fundamental physical …
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Layout decomposition for triple patterning lithography
… of the chip keeps shrinking. Products of the 22 nm technology node are already available on the market, and there are many ongoing research studies for the 14/10 nm technology nodes and beyond. Due to the physical limitations, the traditional 193 nm immersion lithography is facing huge …
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Interferometric light microscopy for wafer defect inspection and three-dimensional object reconstruction
… With the 2DISC method, we examined a 22 nm node intentional defect array (IDA) wafer. The results showed that we can reliably detect defects down to areas as small as 20 nm by 100 nm. Moving forward, we adapted our epi-DPM system to inspect a densely patterned 9 nm node IDA wafer, a …
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Implementation of a Neural Network-Based ASIC Chip for Mobile DNA Devices
… by making it accessible in a wide range of environments. However, current state-of-the-art devices face significant challenges due to the lack of integrated bioinformatics processing capabilities. This research addresses these challenges by developing specialized System-on-Chip (SoC) architectures …
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Development of new fluorescence spectroscopy approaches for the study of silica
… understood nor is the response to local environmental variables like solvent and pH. We investigated PDMPO in a range of environments: using UV-visible and fluorescence spectroscopy supported by computational data, dynamic light scattering and zeta potential measurements to understand the …
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New strategies for electronic design automation problems
As the semiconductor industry marches towards 22 nm technology and beyond, circuit design has become unprecedentedly omplicated. This presents many new challenges for EDA (electronic design automation), such as lack of effective tools for analog circuit or high-volume and high-frequency printed …
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Reconfigurable and Interference-Tolerant Receivers for Next Generation Wireless Systems
… through prototypes fabricated in advanced 22-nm and 45-nm silicon-on-insulator (SOI) technologies. By addressing this long-standing challenge, this work paves the way for fully reconfigurable, interference-resilient radios for 5G and beyond.
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Impact of atmospheric cycling on the release of iron and manganese into seawater from Saharan soil particles
… from artificially treated Niger soil reached 6 nM and from artificially treated Niger Mali soil reached 3.5-10 nM (depending on the different experimental variables). This was significantly greater than from un-weathered particles ~1-1.5 nM at the soil concentrations used (10 mg). For Mn all the …
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The development of sub-25 nm III-V High Electron Mobility Transistors
… performance. At Glasgow, the world-leading 50 nm HEMT process developed in 2003 had not since been improved in the intervening five years. This work describes the fabrication of sub-25 nm HEMTs in a robust and repeatable manner by the use of advanced processing techniques: in particular, …
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CONTROL OF CAVITATION USING DISSOLVED CARBON DIOXIDE FOR DAMAGE-FREE MEGASONIC CLEANING OF WAFERS
… particle count and killer defect numbers to be 22 nm, 113 #/wafer and 4.3 #/mm², respectively, on a 300 mm wafer for 45 nm technology node. A critical challenge in the field, therefore, is to achieve removal of small particles (22 nm to 200 nm) without causing damage to fine wafer features. The …
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Optical sub-diffraction limited focusing for confined heating and lithography
… synthesis of silicon nanowires with widths of 60 nm, which is considerably smaller than the diffraction limit of the processing laser.</p> <p>Nanoscale ridge apertures are devices with a great potential to confine light energy. Such apertures have been experimentally proven to create very small …
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Prospects of germanium-based MOSFETs and tunnel transistors for low power digital logic
… are high-K and metal gate for MOSFETs (45-nm node onward), the FinFET (22-nm node onward) and air gaps between copper interconnects (14-nm node) illustrating that at every new technology node there needs to be a materials or process-related improvement to reduce power and maintain …
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Design, Modeling and Analysis of Non-classical Field Effect Transistors
… also applied to the non-volatile memory cell at 22 nm technology node for low voltage operation with suppressed SCEs.</p> <p>In addition to the silicon technology, our TCAD estimation based on upper projections show that the InGaAs FinFET, with superior mobility and improved interface conditions, …
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Structural and biophysical analysis of the proteasomal deubiquitinase, UCH37
… Rpn13, finding that UCH37 binds to Rpn13 with a 22 nM dissociation constant and that mutations to UCH37's ULD render it unable to be activated by Rpn13. Interestingly, we have found that while Rpn13 activates UCH37 for ubiquitin-AMC cleavage, a monoubiquitin fluorogenic substrate, it appears to …
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Optical and electrical addressing in molecule based logic circuits
… device geometries with lateral dimensions of 22 nm. A further reduction of these components is accompanied by a fundamental change of electronic properties, if a certain threshold is overcome.Organic molecules applied as functional components provide new possibilities in the nanometer scale. …
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Reliability study of Zr and Al incorporated hf based high-k dielectric deposited by advanced processing
… in order to continue CMOS device scaling to the 22-nm technology node. Further scaling according to the device roadmap requires the development of oxides with higher x values in order to scale the equivalent oxide thickness (EOT) to 0.7 nm or below while achieving low defect densities. In …
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Activating Mn(III)F3 towards homo- and heterogeneous oxidative catalysts
… oxide (with no side products) as shown using NMR and GC-MS. Moreover, this can be achieved with reaction times of 7-9 hours. In chapter 3, we demonstrate that this same family of complexes (1-5) can also be employed as oxidative catalysts in the sulphoxidations of both 4-nitrothioanisole and …
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