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Showing 1 to 20 of 46 for “"1/f noise"”.
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1/f noise in semiconductors and metals
The nature of 1/f noise in semiconductors and metals has been analyzed in light of the information provided by some unique, empirically determined parameters. Measurements of the instantaneous resistivity fluctuation isotropy, of the Hall noise magnitude and of the correlation between Hall noise …
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Surface 1/f Noise on Oxidized Silicon
Made available in DSpace on 2014-12-10T19:06:42Z (GMT). No. of bitstreams: 1 7121123.pdf: 4284772 bytes, checksum: 53c2955b8af153df7e9d4a691f71d0d8 (MD5) Previous issue date: 1971
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1/f noise in semiconductors and metals
Properties of 1/f noise (low frequency resistance fluctuations) are analyzed using the results of a number of experiments, several of which are unique to our laboratory. Measurements of thermally activated noise spectral features, as well as the effect of a surface potential on the noise kinetics …
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1/f noise in semiconductors and metals
The nature of l/f noise in semiconductors and metals has been analyzed in light of the information provided by some unique, empirically determined parameters. Measurements of the instantaneous resistivity fluctuation isotropy, of the Hall noise magnitude and of the correlation between Hall noise …
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Probing Spin Glass Energy Landscapes with 1/f Noise
… barriers. We have made measurements of the 1/f noise in the resistance of spin-glass films of five thicknesses. These results are consistent with the limited earlier thin film measurements, despite the use of a different cooling protocol. A recent analysis, based on simulations of mesoscale …
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Universal conductance fluctuations, glassy kinetics, and 1/f noise
The 1/f noise in strongly disordered metallic CCu and SiAu systems was studied in the temperature range 2-300 K. The temperature, frequency, and electric and magnetic field dependencies were found to be consistent with the predictions of the universal conductance fluctuation theory in the low …
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Universal conductance fluctuations, glassy kinetics, and 1/f noise
The 1/f noise in strongly disordered metallic CCu and SiAu systems was studied in the temperature range 2-300 K. The temperature, frequency, and electric and magnetic field dependencies were found to be consistent with the predictions of the universal conductance fluctuation theory in the low …
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Renewal process and diffusion models of 1/f noise
Thesis (Sc.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1979.
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1/f noise and related surface effects in germanium
Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering, 1955.
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1/f noise in MOSFETs with ultrathin gate dielectrics
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 1992
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Design of a high speed 1/f noise test station
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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Measurement and analysis of 1/f noise in uncooled microbolometers
Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000.
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On the 1/f noise of atomic-layer-deposition metal films
… techniques and results of low-frequency noise for atomic-layer-deposition Pt films. Atomic-layer-deposition has been developed as an approach to make ultra-thin and conformal films. It has been employed to make detectors of bolometers. 1/f noise is a fundamental limit to the resolution. …
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Reliability and 1/f noise properties of MOSFETs with nitrided oxide gate dielectrics
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1988.
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Low -Frequency 1/F Noise: Low Temperature Measurements and Effect on Superconducting Qubit Dephasing
Low-frequency noise caused by critical-current fluctuations in Josephson junctions can lead to substantial, measurement-induced dephasing in superconducting qubits. The purpose of this work is to measure this noise as a function of temperature and to simulate its effect on the measurement dynamics …
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Low-frequency 1/f noise : low temperature measurements and effect on superconducting qubit dephasing
Low-frequency noise caused by critical-current fluctuations in Josephson junctions can lead to substantial, measurement-induced dephasing in superconducting qubits. The purpose of this work is to measure this noise as a function of temperature and to simulate its effect on the measurement dynamics …
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1/F Noise & slow spin dynamics in chromium, chromium alloys, and disordered iron zirconium
1/f resistance noise studies of the spin dynamics in two magnetic systems are described in this thesis. In chromium, 1 If noise was used as a probe to study spin density wave polarization dynamics. Measurements of the noise anisotropy in a high quality single crystal of Cr revealed a temperature …
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Design of a Precision, Very Low 1/f Noise, Low Power, Rail-Rail I/O, Integrated Bi-CMOS Operational Amplifier
The detailed design of a precision, very low 1/𝑓 noise, 100𝜇A, 30V, rail to rail input and output, integrated Bi-CMOS operational amplifier is presented. Necessity for such an amplifier in the current technological space is examined. Specific attention is given to the novel design of a stable …
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Measurement of 'one over f noise' in infrared detection using a novel technique
<p>It has been shown that, one over f noise' (1/f noise) limits the sensitivity in Mercury Cadmium Telluride (HgCdTe) infrared devices. It is therefore imperative to be able to measure and account for its contribution to the total device noise. In this thesis, the 1/f noise of a HgCdTe device is …
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Mechanical relaxations, spin glasses and 1/f resistance noise
Two experiments related to 1/f resistance noise will be described in this thesis. The first is measurements of the anelastic piezoresistance in thin films of bismuth, niobium and iron to demonstrate a connection between mechanical anelastic relaxations and electrical 1/f noise from the motion of …
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