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Showing 1 to 1 of 1 for “"β-(InxGa1-x)2O3"”.

  1. Growth and Characterization of (InxGa1-x)2O3, and NiO Heterostructures

    In the recent past, ultra-wide bandgap β-Ga2O3 has drawn a significant amount of attention as an emerging wide bandgap semiconductor because of its promising material properties, for example, large bandgap (~ 4.9 eV), high electric breakdown field (~ 8 MVcm-1), hard radiation tolerance, physical …

    texas-state Repository record for Growth and Characterization of (InxGa1-x)2O3, and NiO Heterostructures (opens in a new tab)