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Showing 1 to 11 of 11 for “"Β-ga2o3"”.
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First-Principles Investigation of Doping and Alloying of β-Ga2O3
<p><em>β</em>-Ga<sub>2</sub>O<sub>3</sub> is an emergent semiconductor for power electronics applications. It has a wide band gap of 4.8 eV and is transparent on the whole spectrum of visible light up to deep ultraviolet. It has a high Baliga figure of merit (BFOM) — a weighted numerical …
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Metal-assisted chemical etching of β-gallium oxide
β-Ga2O3, with an ultra-wide bandgap (UWB) of ~ 4.6 – 4.9 eV and bulk substrate availability, has drawn enormous interest in the power electronics community. Fabricating high-aspect-ratio β-Ga2O3 3D nanostructures without surface damage is essential for next-generation power electronics. …
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Thermally Aware Design Approaches for High Power Density Ultra-Wide Bandgap Power Electronics
… semiconductors like β-type gallium oxide (β-Ga2O3) show promise for the development of next-generation high power density electronics devices such as RF and power electronics. The large bandgap (4.8 eV), high breakdown fields (8 MV/cm), and excellent thermal stability of β-Ga2O3 give promise …
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Power Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications
This work demonstrates high-performance BN/β-Ga2O3 metal-insulator-semiconductor Schottky barrier diodes (MIS SBDs). The BN layer is directly grown on the β-Ga2O3 by pulsed laser deposition (PLD). The presence of a ~2.8 nm BN layer is confirmed by a series of techniques, including X-ray …
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Growth and characterization of epitaxial gallium oxide films
… the growth processes of MOVPE-grown (100) β-Ga2O3 films to fulfill the requirements of vertical devices. An in-depth study has been performed to develop the process of growing µm-level thick films with excellent electrical properties in terms of wide doping range and high mobility. The …
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First Demonstration of beta-phase Gallium Oxide Optical Waveguide in Visible-UV Spectrum
… demonstration of beta-phase gallium oxide (β-Ga2O3) as optical waveguides on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). Their propagation losses in the visible spectrum were comprehensively studied via experiments and simulations of the finite difference …
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Growth and Characterization of (InxGa1-x)2O3, and NiO Heterostructures
In the recent past, ultra-wide bandgap β-Ga2O3 has drawn a significant amount of attention as an emerging wide bandgap semiconductor because of its promising material properties, for example, large bandgap (~ 4.9 eV), high electric breakdown field (~ 8 MVcm-1), hard radiation tolerance, physical …
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Design, Fabrication, and Packaging of Gallium Oxide Schottky Barrier Diodes
Gallium Oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a bandgap of 4.5–4.9 eV, which is higher than the bandgap of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this wide-bandgap is the high critical electric field of Ga2O3, which is estimated to be from 5 …
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Voxelized Atomic Structure Framework for Atomistic Modeling of Multifunctional Materials
… and sample size on thermal transport in β-Ga2O3. These studies demonstrate the complex physics that govern the relationship between material structure and property and highlight the significant computational cost of modeling the underlying linkages with physics-driven simulations alone. We …
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Metal-assisted chemical etching of β-gallium oxide and its device applications
Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2024-12-01
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Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes
Gallium Oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a bandgap of 4.5–4.9 eV, which is larger than that of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this ultra-wide bandgap is the high-temperature stability due to the low intrinsic carrier …