Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 82 for “""silicon p-""i""-n diodes""”.
-
Diamond Schottky barrier diodes
… last decade. The remarkable results exhibited by silicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since 2001, showed the potential of wide band gap semiconductors for replacing silicon (Si) in the range of medium to high voltage applications, where high frequency …
-
GaN-on-Silicon HEMTs and Schottky diodes for high voltage applications
… with lower on-state resistance, if compared to a silicon-based device with the same breakdown voltage. The use of an AlGaN/GaN heterostructure allows the formation of a two-dimensional electron gas (2DEG) at the heterointerface where carriers can reach very high mobility values. These properties …
-
Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes
Interest in wide bandgap semiconductors such as silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga 2 O 3 ) and diamond has increased due to their ability to deliver high power, high switching frequency and low loss electronic devices for power conversion applications. To meet these …
-
Characterization and modeling of silicon and silicon carbide power devices
… has been developed for Schottky/JBS diodes by including the thermionic-emission mechanism in the low-bias range. The newly derived model equations have been implemented in Saber circuit simulator using MAST language. An automated parameter extraction software package developed for …
-
High power superluminescent light-emitting diodes
Superluminescent light-emitting diodes (SLEDs) are optoelectronic devices which combine different aspects of laser diode and LED performance. The device utilises a ridge waveguide structure to amplify spontaneously emitted light. Steps are taken to suppress feedback by minimising facet …
-
Fabrication and transfer assembly of microscale, solid-state light emitting diodes and solar cells for transparent and flexible electronics applications
… approached. Gallium nitride-based light-emitting diodes and silicon solar cells, for example, have achieved such extraordinarily high performance metrics that only incremental improvements upon them are expected in the next decade of intense research. This pseudo-plateau in performance development …
-
Design and Reliability of mm-Wave Circuits In Silicon-Germanium
… for the design of RF and mm-Wave circuits in Silicon-Germanium utilizing CMOS, PIN diodes, and passive circuits. Such circuits consist of a 2-20 GHz CMOS-based TR (Transmit/Receive) SPDT switch and an 18-47 GHz Wilkinson Power Divider-Combiner (WPDC). Optimal design techniques are utilized in …
-
Part I. Large scale procedure for the α-arylation of esters catalyzed by the pd(i) dimer [p(tbu)3]pd(μ-br)]2. Part II. Palladium-catalyzed γ-arylation of α,β-unsaturated esters
… and vinyl halides with the corresponding silicon dienolates. These reactions occur in high yield with a variety of esters and with aromatic and vinylic electrophiles bearing potentially reactive functional groups. The coupling also proceeds in moderate to good yield for the coupling with …
-
Thermally Actuated Resonant Silicon Crystal Nanobalances
<p>As the potential emerging technology for next generation integrated resonant sensors and frequency references as well as electronic filters, micro-electro-mechanical resonators have attracted a lot of attention over the past decade. As a result, a wide variety of high frequency micro/nanoscale …
-
Fabrication, simulation et caractérisation des propriétés de transport de composants à effet de champ latéral sur substrat de soi (Silicon-on-insulator)
… prometteuse pour certaines applications. Les diodes autocommutantes, Self-Switching Diodes (SSD), en font partie. Les SSD sont des composants unipolaires à deux accès ayant une caractéristique I-V non-linéaire semblable à celle d’une diode bipolaire. Leur configuration planaire rend leur …
-
Magnetic assisted statistical assembly
… to assemble micro-components into recesses on silicon based integrated circuits. Patterned SmCo magnetic thin films at the bottom of recesses are used to provide forces to orient, align and retain micro-devices on silicon. The overall objective is to obtain functionalities not readily available …
-
Role of polythiophene- based interlayers from electrochemical processes on organic light-emitting diodes
… hole-injection contact of organic light-emitting diodes (OLED). The polymer films are obtained by the electropolymerization or the electrochemical doping/dedoping of a spin-coated layer. Their electrical properties and energetics are tailored by electrochemical adjustment of their doping levels in …
-
Defect reactions and impurity control in silicon
This Ph.D. thesis has covered the scientific issues of defect reactions involving dopants and impurities in Si, and the applications of this knowledge to reactive ion etching (RIE) and Fe gettering processes. The reactions among self-interstitials (Sii), vacancies (V), impurities (C, 0), and …
-
Heavily doped bulk unipolar structures
… This has entailed the study of heavily doped silicon characteristic which comprises important regions of the multilayer bulk unipolar devices. The devices covered are Camel diodes, P-plane barrier diodes and open-base bipolar transistors. Two operating modes are distinguished: the punchthrough …
-
Development Of Silicon-Based Anodes And In-Situ Characterization Techniques For Lithium Ion Batteries
… such as portable devices and electric vehicles. Silicon has recently been explored as a promising anode material due to its low discharge potential (<0.4 V) and high specific capacity (4200 mAh g<sup>-1</sup>). The capacity of silicon potentially exceeds more than 10 times of the conventional …
-
Characterization, Functionalization and Applications of Alkyl Monolayers on Silicon Surfaces
… alkyl monolayers chemomechanically prepared on silicon surfaces. A new method of surface modification, laser-activation modification of surfaces (LAMS), and multivariate analyses of time-of-flight secondary ion mass spectrometry (ToF-SIMS) images of LAMS spots were also reported. X-ray …
-
On the design of single electron transistors for the measurement of spins in phosphorus doped silicon
Phosphorus doped silicon is a prime candidate for spin based qubits. We plan to investigate a novel hybrid technique that combines the advantages of spin selective optical excitations with that of electrical readout measurements to detect spin defects in semiconductors. In this thesis, I present my …
-
Topics in the theory of semiconductors: I. Novel semiconductors II. Uniaxial stress dependence of deep impurities
… application of these materials as light-emitting diodes and solid-state lasers. 2 iv Chapter 3: Energy band gaps for the metastable, substitutional, crystalline alloys are predicted. These materials undergo a zincblende-to-diamond, order-disorder, structural phase transition as a function of …
-
Electrical Design Considerations and Packaging of Power Electronic Modules
… were applied to design and analyze a 50KVA 650V silicon carbide (SiC) half-bridge power electronic power module consisting of three separate power substrates interconnected in parallel. The layout of this power module was constrained by the existing module housing. The parasitic inductances of …
-
III-V Bismide Optoelectronic Devices
… type-I InGaAsSb/AlGaInAsSb quantum well laser diodes in 3-4 um mid-wavelength range, the lasing wavelength and performance of the devices are limited due to the lack of hole confinement in the active regions. In this dissertation, a novel GaSb-based GaInAsSbBi material is proposed to replace …
Page 1 of 5