Virginia Tech
Series-Connection of Silicon Carbide MOSFET Modules using Active Gate-Drivers with dv/dt Control
Abstract
dc:description.abstractThis work investigates the voltage scaling feasibility of several low voltage SiC MOSFET modules operated as a single series-connected switch using active gate control. Both multilevel and two-level topologies are capable of achieving higher blocking voltages in high-power converter applications. Compared to multilevel topologies, two-level switching topologies are of interest due to less complex circuitry, higher density, and simpler control techniques. In this work, to balance the voltage between series-connected MOSFETs, device turn-off speeds are dynamically controlled on active gate-drivers using active gate control. The implementation of the active gate control technique (specifically, turn-off dv/dt control) is described in this thesis. Experimental results of the voltage balancing behavior across eight 1.7 kV rated SiC MOSFET devices in series (6 kV total dc bus voltage) with the selected active dv/dt control scheme are demonstrated. Finally, the voltage balancing performance and switching behavior of series-connected SiC MOSFET devices are discussed.
Degree
thesis:*- Name thesis:degree_name
- Master of Science
- Level thesis:degree_level
- masters
- Discipline thesis:degree_discipline
- Electrical Engineering
- Department dc:contributor.department
- Electrical Engineering
- Grantor dc:publisher
- Virginia Tech
- Year dc:date.issued
- 2019
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Raszmann, Emma Barbara
- Chair dc:contributor.committeechair
-
- Burgos, Rolando
- Committee members dc:contributor.committeemember
-
- Dong, Dong
- Boroyevich, Dushan
Subjects
dc:subject × 8Rights
dc:rights- Statement dc:rights
-
- In Copyright
- Licence dc:rights.uri
Identifiers
dc:identifier.*- Dc Identifier Other
- vt_gsexam:22759
- OAI identifier oai:identifier
- oai:vtechworks.lib.vt.edu:10919/95938