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Virginia Tech

A Fundamental Study on the Relocation, Uptake, and Distribution of the Cs⁺ Primary Ion Beam During the Secondary Ion Mass Spectrometry Analysis

Abstract

dc:description.abstract

Combining cesium (Cs) bombardment with positive secondary molecular ion detection (MCs+) can extend the analysis capability of Secondary Ion Mass Spectrometry (SIMS) from the dilute limit (<1%) to matrix elements. The MCs+ technique has had great success in quantifying the sample composition of III-V semiconductors as well as dopants and/or impurities; however, it has been less effective at reducing the matrix effect for IV compounds, particularly Si-containing compounds, due to Cs overloading at the surface during the analysis from the Cs primary ion beam. The Cs overloading issue is attributable to the mobility and relocation of the implanted Cs to the surface; this effect happens almost instantaneously. Once the surface is overloaded with Cs, the excess Cs begins to reneutralize the ionization Cs and, as a result, the MCs+ technique is ineffective at reducing the matrix effect. This research provides new insights for improving the MCs+ technique and elucidating the Cs mobility. A combination of multiple experimental techniques and theoretical modeling was implemented to assess the Cs retention, up-take, and distribution differences between group III-V and IV materials. Early experiments revealed a temperature-dependent component of the Cs mobility, prompting an investigation of this phenomenon. Therefore, we designed, built, and installed a variable temperature stage for our SIMS with temperatures ranging from -150 to 300 C. This enabled us to study the temperature-dependent component of the Cs mobility and the effect it has on the secondary ion emission processes. Additionally, a method was devised to quantify the amount of neutralization and ionization due to the relocated Cs. The results allow for a more thorough understanding of the material dependence on the Cs+-sample interaction and the temperature component of the Cs mobility.

Degree

thesis:*
Name thesis:degree_name
Ph. D.
Level thesis:degree_level
doctoral
Discipline thesis:degree_discipline
Materials Science and Engineering
Department dc:contributor.department
Materials Science and Engineering
Grantor dc:publisher
Virginia Tech
Year dc:date.issued
2016

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Giordani, Andrew J.
Chairs dc:contributor.committeechair
  • Guido, Louis J.
  • Hunter, Jerry L.
Committee members dc:contributor.committeemember
  • Reynolds, William T. Jr.
  • Suchicital, Carlos T. A.

Subjects

dc:subject × 5

Rights

dc:rights
Statement dc:rights
  • In Copyright

Identifiers

dc:identifier.*
Dc Identifier Other
vt_gsexam:7397
OAI identifier oai:identifier
oai:vtechworks.lib.vt.edu:10919/64998

Chain of custody

source
Harvested from
Virginia Tech
Base URL
vtechworks.lib.vt.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Giordani, Andrew J.. A Fundamental Study on the Relocation, Uptake, and Distribution of the Cs⁺ Primary Ion Beam During the Secondary Ion Mass Spectrometry Analysis. doctoral thesis, Virginia Tech, 2016. http://hdl.handle.net/10919/64998