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Virginia Tech

Simulation of Bulk and Grain Boundary Diffusion in B2 NiAl

Abstract

dc:description.abstract

Molecular dynamics simulations of the diffusion process in ordered B2 compounds at high temperature were performed using an embedded atom interatomic potential developed to fit NiAl properties. Diffusion in the bulk occurs through a variety of cyclic mechanisms that accomplish the motion of the vacancy through nearest neighbor jumps restoring order to the alloy at the end of the cycle. The traditionally postulated six-jump cycle is only one of the various cycles observed and some of these are quite complex. Diffusion at the grain boundary mainly takes place through sequences of coordinated nearest neighbor jumps yielding to a rearrangement of the grain boundary structure. Two distinct mechanisms resulting in a structural unit migration of the vacancy are also identified. The results are analyzed in terms of the activation and configuration energies calculated using molecular statics simulations.

Degree

thesis:*
Name thesis:degree_name
Master of Science
Level thesis:degree_level
masters
Discipline thesis:degree_discipline
Materials Science and Engineering
Department dc:contributor.department
Materials Science and Engineering
Grantor dc:publisher
Virginia Tech
Year dc:date.issued
2001

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Soule de Bas, Benjamin J.
Chair dc:contributor.committeechair
  • Farkas, Diana
Committee members dc:contributor.committeemember
  • Reynolds, William T. Jr.
  • Corcoran, Sean G.

Subjects

dc:subject × 5

Rights

dc:rights
Statement dc:rights
  • In Copyright

Identifiers

dc:identifier.*
Dc Identifier Other
etd-05312001-132014
OAI identifier oai:identifier
oai:vtechworks.lib.vt.edu:10919/33352

Chain of custody

source
Harvested from
Virginia Tech
Base URL
vtechworks.lib.vt.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Soule de Bas, Benjamin J.. Simulation of Bulk and Grain Boundary Diffusion in B2 NiAl. masters thesis, Virginia Tech, 2001. http://hdl.handle.net/10919/33352