Determination of the Band Gap Bowing Parameter of A1xGa1-xN with Contactless Electroreflectance

Contactless electroreflectance (CER), a modulation spectroscopy (MS) technique, has been used to study the A and C exciton transitions in A1xGa1-xN layers for a composition range of 0 ≤ x ≤ 0.48 at room temperature. Taking the entire composition range (0 ≤ x ≤ 1) into account by incorporating a previously reported band gap energy for AlN, the dependence of the A-exciton transition on composition showed a downward bowing from linearity. A bowing parameter of b = 1.7 eV was found. Analysis of the lower composition range 0 ≤ x ≤ 0.48 resulted in a linear fit, as did the trend for the detectable C exciton transitions. The slope of the linear trendlines for the A and C exciton were practically the same.

Name thesis:degree_name

Master of Science

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Physics

Year dc:date.available

2006

Author dc:creator

• McGlinchey, Laura C.

Contributors dc:contributor

• Dr. Martin Muñoz

• AlN
• composition
• exciton transitions
• modulation spectroscopy
• Physical Sciences and Mathematics
• Physics

Statement dc:rights

• © The Author

Identifier

https://scholarscompass.vcu.edu/etd/1002

OAI identifier oai:identifier

oai:scholarscompass.vcu.edu:etd-2001