Characterization of Boron Nitride Thin Films on Silicon (100) Wafer.

Cubic boron nitride (cBN) thin films offer attractive mechanical and electrical properties. The synthesis of cBN films have been deposited using both physical and chemical vapor deposition methods, which generate internal residual, stresses that result in delamination of the film from substrates. Boron nitride films were deposited using electron beam evaporation without bias voltage and nitrogen bombardment (to reduce stresses) were characterize using FTIR, XRD, SEM, EDS, TEM, and AFM techniques. In addition, a pin-on-disk tribological test was used to measure coefficient of friction. Results indicated that samples deposited at 400°C contained higher cubic phase of BN compared to those films deposited at room temperature. A BN film containing cubic phase deposited at 400°C for 2 hours showed 0.1 friction coefficient.

Grantor dc:publisher

University of North Texas

Year dc:date

2007

Author dc:creator

• Maranon, Walter

Contributors dc:contributor

• Nasrazadani, Seifollah
• Wang, Shuping
• Plummer, Mitty C.

• cubic boron nitride
• thin films
• TEM
• FTIR
• 400°C
• Thin films.
• Boron nitride.

Statement dc:rights

• Public
• Copyright
• Maranon, Walter
• Copyright is held by the author, unless otherwise noted. All rights reserved.

Language dc:language

English

Identifier

oclc: 191488109
https://digital.library.unt.edu/ark:/67531/metadc3942/
ark: ark:/67531/metadc3942

OAI identifier oai:identifier

info:ark/67531/metadc3942