The use and removal of a hydrogen resist on the Si (001 surface for P-in-Si device fabrication

Hallam, Toby

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UNSW, Sydney

The use and removal of a hydrogen resist on the Si (001 surface for P-in-Si device fabrication

dc:creator Hallam, Toby

dc:date2006

Degree

thesis:*

Grantor dc:publisher: UNSW, Sydney
Year dc:date: 2006

Author and committee

dc:creator, dc:contributor.*

Author dc:creator: Hallam, Toby

Subjects

dc:subject × 4

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Statement dc:rights: open access

CC BY-NC-ND 3.0

free_to_read
Licence: https://purl.org/coar/access_right/c_abf2

https://creativecommons.org/licenses/by-nc-nd/3.0/au/
Language dc:language: EN

Identifiers

dc:identifier.*

Identifier: https://doi.org/10.26190/unsworks/7468
OAI identifier oai:identifier: oai:unsworks.library.unsw.edu.au:1959.4/61807

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Harvested from: University of New South Wales
Base URL: unsworks.unsw.edu.au/oai/provider
Last updated: 2026-07-24
Source record: OAI-PMH GetRecord

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citation

Hallam, Toby. The use and removal of a hydrogen resist on the Si (001 surface for P-in-Si device fabrication. UNSW, Sydney, 2006. http://hdl.handle.net/1959.4/61807

The use and removal of a hydrogen resist on the Si (001 surface for P-in-Si device fabrication

Degree

Author and committee

Subjects

Rights

Identifiers

Chain of custody

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