A study of thermal exchange in a thermophotovoltaic (Tpv) system at moderate temperature

A numerical simulation study is reported on the thermal exchange in an evacuated parallel-plate system consisting of an emitter and a photovoltaic (PV) material with the emitter temperature between 350K and 550K. Although higher temperature (and thus higher power output) thermophotovoltaic systems have been of interest previously, the focus here is on systems that can not achieve high temperatures, like micromachines. The study examines the electrical power output and power generation efficiency for four kinds of emissivity variations for the heat source coupled with three different compounds of {dollar}\rm In\sb{(x)}Ga\sb{(1-x)}As{dollar} PV materials. The results show that a 25% Ho YAG thin film selective emitter coupled with an In(0.72)Ga(0.28)As material has the highest power generation efficiency for actual materials. These values are between 28% and 34%, depending upon the temperature. Also, the ideal cases that yield the potential maximum electrical power output and power generation efficiency for this temperature range are discussed.

Name thesis:degree_name

Master of Science (MS)

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Mechanical Engineering

Grantor dc:publisher

University of Nevada, Las Vegas

Year

1998

Author dc:creator

• Xu, Yan

Contributors dc:contributor

• Robert F. Boehm

Statement dc:rights

• IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/

Identifier

https://oasis.library.unlv.edu/rtds/863

OAI identifier oai:identifier

oai:oasis.library.unlv.edu:rtds-1862