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University of Illinois - Urbana-Champaign
Infrared detection properties of Si P-I-N diodes doped with deep levels
Abstract
dc:descriptionMade available in DSpace on 2017-11-30T22:11:07Z (GMT). No. of bitstreams: 2 6070599.pdf: 33209903 bytes, checksum: 162575177826612629aa81702d567d78 (MD5) license.txt: 4813 bytes, checksum: 715c4321821a960fa1a1e91d2ac7ebce (MD5) Previous issue date: 1969
Degree
thesis:*- Name thesis:degree_name
- M.S. (master's)
- Level thesis:degree_level
- Thesis
- Discipline thesis:degree_discipline
- Electrical Engineering
- Year dc:date
- 2017
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Maher, Anthony Thomas
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- Copyright 1969 Anthony Thomas Maher
- Language dc:language
- en
Identifiers
dc:identifier.*- Identifier
-
6070599
ocn489510294 - OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/98605