Tunneling Mechanisms, Trap States, and Zero-Bias Effects in Gallium Arsenide

Andrews, Austin Michael II

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University of Illinois at Urbana-Champaign

Tunneling Mechanisms, Trap States, and Zero-Bias Effects in Gallium Arsenide

dc:creator Andrews, Austin Michael II

thesis:degree_name Ph.D.

dc:date2014

Abstract

dc:description

Made available in DSpace on 2014-12-10T19:06:50Z (GMT). No. of bitstreams: 1 7212070.pdf: 2878966 bytes, checksum: f1dbb0cf46e71b27aad139256e899c5d (MD5) Previous issue date: 1971

Degree

thesis:*

Name thesis:degree_name: Ph.D.
Level thesis:degree_level: Dissertation
Discipline thesis:degree_discipline: Electrical Engineering
Grantor: University of Illinois at Urbana-Champaign
Year dc:date: 2014

Author and committee

dc:creator, dc:contributor.*

Author dc:creator: Andrews, Austin Michael II

Subjects

dc:subject × 1

Engineering, Electronics and Electrical

Identifiers

dc:identifier.*

Identifier: (UMI)AAI7212070
OAI identifier oai:identifier: oai:www.ideals.illinois.edu:2142/62994

Chain of custody

source

Harvested from: University of Illinois - Urbana-Champaign
Base URL: www.ideals.illinois.edu/oai-pmh
Last updated: 2026-07-22
Source record: OAI-PMH GetRecord

related terms

citation

Andrews, Austin Michael II. Tunneling Mechanisms, Trap States, and Zero-Bias Effects in Gallium Arsenide. Dissertation thesis, University of Illinois at Urbana-Champaign, 2014. http://hdl.handle.net/2142/62994

Tunneling Mechanisms, Trap States, and Zero-Bias Effects in Gallium Arsenide

Abstract

Degree

Author and committee

Subjects

Identifiers

Chain of custody

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