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University of Illinois - Urbana-Champaign

Recombination luminescence in irradiated silicon: Effects of thermal annealing and lithium impurity

Abstract

dc:description

Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-05T21:59:28Z No. of bitstreams: 1 1971_johnson.pdf: 6554176 bytes, checksum: 1ea97249e78866141ef86dbffbcb1226 (MD5)

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Physics
Year dc:date
2012

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Johnson, Eric Shanks
Contributors dc:contributor
  • Compton, W.D.

Subjects

dc:subject × 2

Rights

dc:rights
Statement dc:rights
  • ©1971 Johnson
Language dc:language
en

Identifiers

dc:identifier.*
Identifier
6008327
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/30477

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Johnson, Eric Shanks. Recombination luminescence in irradiated silicon: Effects of thermal annealing and lithium impurity. Dissertation thesis, 2012. http://hdl.handle.net/2142/30477