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University of Illinois - Urbana-Champaign

X-ray generation by MeV electrons in silicon: Temperature, tilt and thickness dependence

Abstract

dc:description

Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-16T14:05:29Z No. of bitstreams: 1 1982_kozlowski.pdf: 1872877 bytes, checksum: 090763a400cc816d2a1cdf9a1bbe79bb (MD5)

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Physics
Year dc:date
2011

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Kozlowski, Robert Edward
Contributors dc:contributor
  • Koehler, James S.

Subjects

dc:subject × 4

Rights

dc:rights
Statement dc:rights
  • 1982 Robert Edward Kozlowski
Language dc:language
en

Identifiers

dc:identifier.*
Identifier
88456
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/25416

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Kozlowski, Robert Edward. X-ray generation by MeV electrons in silicon: Temperature, tilt and thickness dependence. Dissertation thesis, 2011. http://hdl.handle.net/2142/25416