Thermal and dynamic processes in deposition, growth, and etching of materials: I. Thermal and collision-induced activation of alkyl intermediates on aluminum. II. Chemical vapor deposition and growth of silicide on copper

Chemical vapor deposition (CVD) is becoming an increasingly important manufacturing process for the fabrication of VLSI and ULSI devices. A major challenge in optimizing a CVD process is developing an understanding of the complex mechanistic pathways followed. The first section in this thesis reports studies on the thermal and dynamical activation of surface bound alkyl species which play a vital role in the form of intermediates in metal-organic chemical vapor deposition. The particular systems of interest are those of aluminum CVD precursors. Models of these intermediates are obtained by thermal decomposition of alkyl iodides. The results provide an insight into the complex reaction patterns involved in the thermal reactions and rate-structure sensitivities of the alkyl species in the presence of the coadsorbed halogen atom. Multiple reaction pathways including metal etching processes which bear direct implications to the synthesis of organometallics and metal etching, are identified.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Chemical Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Lohokare, Shrikant Prabhakar

Contributors dc:contributor

• Nuzzo, Ralph G.

• Chemistry, Physical
• Engineering, Materials Science

Statement dc:rights

• Copyright 1996 Lohokare, Shrikant Prabhakar

Language dc:language

eng

Identifier

9780591199253
AAI9712360
(UMI)AAI9712360

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21898