Gas source molecular beam epitaxy of aluminum gallium indium phosphide for visible spectrum light emitting diodes

Gas source molecular beam epitaxy is an advanced crystal growth technique that has been shown to be capable of producing high quality, ultra-thin semiconductor layers and interfaces, excellent dopant and thickness uniformity, and precisely controlled compositions in the aluminum gallium indium arsenide and indium phosphide material systems. This work extends this growth technique to the aluminum gallium indium phosphide material system and demonstrates that it is a potentially viable and attractive technique for producing visible optoelectronic devices.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Baillargeon, James Nelson

Contributors dc:contributor

• Cheng, Keh-Yung

• Physics, Electricity and Magnetism
• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1991 Baillargeon, James Nelson

Language dc:language

eng

Identifier

(UMI)AAI9124380
AAI9124380

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21464