Kinetic optimization of titanium silicide chemical vapor deposition

Titanium disilicide (TiSi$\sb 2$) has found widespread application as a material for transistor gate/source/drain contacts. Considerable interest has arisen in fabrication by chemical vapor deposition (CVD) because of scalability problems with the salicide process (a Ti-Si solid-phase reaction) that currently defines the state-of-the-art. Furthermore, the possibility of selective CVD on Si vs SiO$\sb 2$ offers the potential to eliminate masking and etching steps that are currently required for the salicide process. Numerous studies of thermal TiSi$\sb 2$ have been performed, but the results have been hampered by one or more of the following problems: excessive substrate consumption, high nucleation and growth temperatures, or selectivity loss.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Chemical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Southwell, Robert Peter

Contributors dc:contributor

• Seebauer, Edmund G.

• Engineering, Chemical
• Engineering, Electronics and Electrical

Statement dc:rights

• Copyright 1996 Southwell, Robert Peter

Language dc:language

eng

Identifier

9780591199994
AAI9712442
(UMI)AAI9712442

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/19512