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University of Alabama Birmingham

Anodic Stripping Voltammetry of Tellurium (IV) in 1.0M NH4, SCN at Rotating Disk Gallium - Thin-Film Electrode.

Abstract

dc:description.abstract

The electroanalytical technique of anodic stripping voltammetry (ASV), using a gallium-thin film electrode in 1.0M NH4SCN at 60°C has been applied to study the electroanalytical chemistry of Te(IV). Both externally plated and in-situ plated thin-film gallium on rotating glassy carbon disk electrodes are presented. Detection limits of Te(IV) on various monolayer equivalents of gallium plated on a solid glassy carbon electrode are also presented. The sensitivity of this method, which is 1x10-9 TE(IV), is comparable to that of anodic stripping voltammetry using gold-plated electrodes.

Degree

thesis:*
Level thesis:degree_level
Thesis
Year
1981

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Olayiwola, Mojeed Tunde

Subjects

dc:subject × 5

Identifiers

dc:identifier.*
OAI identifier oai:identifier
oai:digitalcommons.library.uab.edu:etd-collection-8103

Chain of custody

source
Harvested from
University of Alabama Birmingham
Base URL
digitalcommons.library.uab.edu/do/oai/
Last updated
2026-07-24
Source record
OAI-PMH GetRecord
citation

Olayiwola, Mojeed Tunde. Anodic Stripping Voltammetry of Tellurium (IV) in 1.0M NH4, SCN at Rotating Disk Gallium - Thin-Film Electrode.. Thesis thesis, 1981. https://digitalcommons.library.uab.edu/etd-collection/7111