Estudio de HEMTs basados en semiconductores de gap estrecho. Desde los materiales al dispositivo

[EN] The objective of this thesis was to explore, through the results of the simulation Monte Carlo (MC), improvements involves the use of narrow gap semiconductors (InAs and InSb) in the channel of HEMTs to improve their behavior at high frequency and low noise. The first step in simulating any type of device is the correct simulation of semiconductors involved. Not only are to be studied semiconductors will lead to the channel (InAs and InSb), but also in charge of forming the barrier (ALSB and AlInSb). For obtaining accurate simulation parameters, it was necessary not only an intensive search of the literature, but also the fine-tuning of any parameter. After obtaining the simulation parameters, we studied the transport properties of both electrons and holes inside the semiconductor by the results obtained with our single particle MC simulator suitably modified for the correct simulation of these gap semiconductors narrow. The next step is the analysis of heterostructures formed with the narrow gap semiconductor in the channel and in which the later will be based HEMTs. We studied two heterostructures: ALSB / InAs and Al0.15In0.85As/InSb. These two heterostructures have been compared from the results obtained with our two-dimensional MC simulator properly modified to correctly simulate this type of heterojunction. After the study of semiconductor heterostructures isolated and have studied the characteristics of InAs-based HEMTs / ALSB. We have explained the process of manufacturing these devices, and both static and dynamic characteristics obtained from the MC simulation have been compared with experimental results measured at the Chalmers University of thechnology.

Author

• Rodilla Sánchez-Cuadrado, Helena

• Tesis y disertaciones académicas
• Universidad de Salamanca (España)
• Tesis Doctoral
• Academic dissertations
• Transporte de electrones
• Tecnología electrónica
• Dispositivos semiconductores
• Electron transport
• Electronic Technology
• Semiconductors

Identifier

hdl:10366/83172

OAI identifier oai:identifier

oai:gredos.usal.es:10366/83172