Abstract
dc:description.abstractThis thesis demonstrates the integration of pure Ge near-infrared photodetectors on Si. Ge epilayers were grown directly on Si by a two-step ultra-high-vacuum/chemical-vapor-deposition (UHV/CVD) process. This work conclusively proves that threading-dislocation densities in the Ge epilayers, measured both by plan-view transmission electron microscopy and etch-pit-density (EPD) counting, were reduced by cyclic thermal annealing. Additionally, Ge mesas with no threading dislocations as measured by EPD were also demonstrated. The removal of threading-dislocations can be attributed to the thermal stress induced dislocation glide and reactions. Using the annealed Ge epilayers grown on Si, p-i-n Ge photodetectors with maximum responsivities of 770 mA/W at 1.3 μm were fabricated. Finally, to allow the integration of Ge epilayers in Si microelectronic processing, the protection and passivation of Ge was investigated. The passivation was provided by the oxidation of Si epilayers grown on Ge. Capacitance-voltage characteristics of metal-oxide-semiconductor devices demonstrated the high quality of the passivation with the measured interface state density of 4 x 1011 cm-2eV- 1.
Degree
thesis:*- Department dc:contributor.department
- Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.
- Grantor dc:publisher
- Massachusetts Institute of Technology
- Year dc:date.issued
- 2001
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Luan Hsin-Chiao, 1969-
- Advisor dc:contributor.advisor
-
- Lionel Cooper Kimerling.
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
- Licence dc:rights.uri
- Language dc:language.iso
- eng
Identifiers
dc:identifier.*- Handle dc:identifier.uri
- http://hdl.handle.net/1721.1/8782
- OAI identifier oai:identifier
- oai:dspace.mit.edu:1721.1/8782