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Massachusetts Institute of Technology

Multivariate endpoint detection of plasma etching processes

Abstract

dc:description.abstract

In plasma etching process it is critical to know when the film being etched has cleared to the underlying film, i.e. to detect endpoint, in order to achieve the desired device performance in the resulting integrated circuit. The most highly utilized sensor technology for determining endpoint has historically been optical emission spectroscopy (OES), because it is both non-invasive and highly sensitive to chemical changes in the reactor. Historically, the intensity of one emission peak corresponding to a reactant or product in the etch process was tracked over time, leading to a single-wavelength endpoint trace. At endpoint, the concentrations of reactant and product species undergo a step change that is detectable in the optical emission endpoint trace for many plasma etching processes. Unfortunately, for several critical etching steps (contact and via), the exposed area of the film being etched is very low (<1%, with the rest being masked with photoresist),. and this traditional method of endpoint detection has failed because of the low signal-to-noise ratio at endpoint. Our work has provided a way to improve the endpoint detection sensitivity by a factor of approximately 5-6, so that endpoint can be adequately detected for these low open area etching steps. By utilizing CCD array detection for OES sensors, it is possible to rapidly collect (2-10 Hz) full spectral data (200-900 nm in wavelength), consisting of over 1000 discrete wavelength channels from a plasma etching process. By appropriately utilizing this multi-wavelength data, we have been able to achieve significant improvements in sensitivity. Our work has focused on characterizing, analyzing, and developing new multivariate (multi-wavelength) strategies to optimize the sensitivity of the endpoint detector.

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Dept. of Chemical Engineering.
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
2002

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Goodlin, Brian E., 1974-
Advisor dc:contributor.advisor
  • Herbert H. Swain and Duane S. Boning.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
eng

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/1721.1/8498
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/8498

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
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citation

Goodlin, Brian E., 1974-. Multivariate endpoint detection of plasma etching processes. Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/8498