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Massachusetts Institute of Technology

Microwave frequency power dependence in high-Tc thin films, grain boundaries, and Josephson junctions

Abstract

dc:description

Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Physics, 1999.

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Department of Physics
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
1999

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Habib, Youssef M., 1960-
Advisor dc:contributor.advisor
  • Mildred S. Dresselhaus and Daniel E. Oates.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
eng

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/1721.1/84746
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/84746

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
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related terms
citation

Habib, Youssef M., 1960-. Microwave frequency power dependence in high-Tc thin films, grain boundaries, and Josephson junctions. Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/84746