Fabrication and testing of dual gate p-channel MOSFETs

In this thesis, I fabricated and tested p-channel dual gate MOSFETs that will be used to make conductance and resistance measurements of nanocrystalline solids. Using MOSFETs with narrow gates, we can measure the resistance of these nanocrystals, which are typically extremely high. The group had previously used n-channel MOSFETs, and this project tests the potential for using p-channel devices. This thesis discusses the fabrication techniques and challenges, as well as G-Vg, threshold voltage, and hole mobility measurements from wide gate devices, which are used as a proof of concept for the narrow gate devices. Future work in the group will finish fabricating and testing narrow gate devices.

Department dc:contributor.department

Massachusetts Institute of Technology. Department of Physics.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2013

Author dc:creator

• Easley, Justin Lavaughn

Advisor dc:contributor.advisor

• Marc A. Kastner.

• Physics.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/84389

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/84389