Design, fabrication and characterization of terahertz quantum-well photodetectors

Terahertz (THz) photodetectors are important in the fully exploration and development of electromagnetic spectrum. However, a fast and sensitive THz photodetector ready for array integration is not available. A THz Quantum-well Photodetector (QWP) has the properties of being fast, sensitive, low-noise, and narrow-band. It is promising for large-array integration for THz imaging. In addition, a THz QWP-LED (Light-Emitting Diode) can upconvert the THz to NIR radiation and useful for THz imaging in Focal-Plane Array (FPA). In this thesis project, the theory of the intersubband transition and carrier transport in a THz QWP is studied. The designe, fabrication, measurement-system buildup, and characterization are performed. In addition, the design and fabrication process of THz QWP-LED are also carried out. Such devices have potential applications in many fields such as biology, medication and security.

Department dc:contributor.department

Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2013

Author dc:creator

• Huang, Shengxi, Ph. D. Massachusetts Institute of Technology

Advisor dc:contributor.advisor

• Qing Hu.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/82399

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/82399