Bilayer graphene growth by low pressure chemical vapor deposition on copper foil

Successfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer graphene on the outside surface of copper enclosures. The effect of several parameters on bilayer growth rate and domain size was investigated and high-coverage bilayers films were successfully grown. Furthermore, the quality of the bilayer was confirmed using Raman spectroscopy. Finally, we consider future studies that may reveal the underlying mechanisms behind bilayer growth.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2012

Author dc:creator

• Fang, Wenjing, Ph. D. Massachusetts Institute of Technology

Advisor dc:contributor.advisor

• Jing Kong.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/75656

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/75656