Sub-10-nm electron-beam lithography for templated placement of colloidal quantum dots

This thesis presents the investigation of resolution limits of electron-beam lithography (EBL) at the sub-10-nm scale. EBL patterning was investigated at low electron energy (2 keV) in a converted scanning electron microscope and at high electron energy (200 keV) in an aberration-corrected scanning transmission electron microscope. Sub-10-nm structures were fabricated and proximity effects were evaluated in both conditions. As an application of sub-10-nm EBL, this thesis presents a templated-self-assembly technique to control the position of individual colloidal quantum dots smaller than 10 nm.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2011

Author dc:creator

• Manfrinato, Vitor Riseti

Advisor dc:contributor.advisor

• Karl K. Berggren.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/68504

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/68504