A novel sublimable mask lift-off method for patterning thin films

Photolithography's accuracy and scalability has made it the method for sub-micron-scale definition of single-crystal semiconductor devices for over half a century. Unfortunately, organic semiconductor devices are chemically incompatible with the types of resists, solvents, and etchants traditionally used. This work investigates the use of a chemically inert resist that relies on phase changes for lift-off patterning thin films of organic semiconductors and metals.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2011

Author dc:creator

• Bahlke, Matthias Erhard

Advisor dc:contributor.advisor

• Marc A. Baldo.

• Electrical Engineering and Computer Science.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/65325

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/65325