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Massachusetts Institute of Technology

Micro-cleaved ridge lasers for optoelectronic integration on silicon

Abstract

dc:description.abstract

This thesis addresses one of the last hurdles to optoelectronic integration on silicon, namely the incorporation of room-temperature, electrically-pumped edge-emitting laser diodes. To this end, thin (-6 pm) InP-based multiple quantum well (MQW) ridge laser platelets emitting at a wavelength of 1550 nm have been manufactured and integrated by metal-to-metal bonding onto silicon substrates. These laser platelets can be thought of as freestanding optoelectronic building blocks that can be integrated as desired on diverse substrates. These blocks are fully processed lasers, with both top side and bottom side electrical contacts. The thinness of these optoelectronic building blocks and the precision with which their dimensions are defined are conducive to assembling them in dielectric recesses on a substrate, such as silicon, as part of an end-fire coupled, coaxial alignment optoelectronic integration strategy. They are assembled by a micro-scale pick and place technique that allows the blocks to be picked up individually and placed as desired on any substrate. Integration is accomplished by metal-to-metal solder bonding. To enable the manufacture of these laser blocks, a novel micro-cleaving process technology has been developed. This novel micro-cleaving process is used to simultaneously obtain both smooth end laser facets and precisely defined laser cavity lengths. As a proof of concept, this process has been shown to achieve nominal cavity lengths of 300 pm +/- 1.25 pm. It is believed that this micro-cleaving process could be used in the future to make thin platelet lasers having much shorter cavity lengths and with better than 1.25 pm length precision. For the 300 pm long, 6 ,am thin, micro-cleaved ridge platelet lasers integrated onto silicon substrates, continuous-wave lasing at temperatures as high as 55 "C and pulsed lasing at temperatures to at least 80 "C have been achieved.

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
2008

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Rumpler, Joseph John, 1976-
Advisor dc:contributor.advisor
  • Clifton G. Fonstad, Jr.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
eng

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/1721.1/44718
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/44718

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Rumpler, Joseph John, 1976-. Micro-cleaved ridge lasers for optoelectronic integration on silicon. Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/44718