An analysis of MRAM based memory technologies

MRAM is a memory (RAM) technology that uses electron spin to store information. Often been called "the ideal memory", it can potentially combine the density of DRAM with the speed of SRAM and non-volatility of FLASH memory or hard disk, and all this while consuming a very low amount of power. However, it is the need for a fast and non-volatile computer memory that has been the key driver for evolution of this technology. At the moment, MRAM is in its final stages of development and much of the current research concentrates on issues like reducing the write current, increasing the density and making the process more reproducible. A lot of companies are pursuing research on this technology and are likely to introduce it into the market in the near future. However, it will be a while before MRAM can replace conventional memories. Nevertheless, since MRAM can resist high radiation, and can operate in extreme temperature conditions, it is likely that we will see the first MRAM in applications that need such properties.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2006

Author dc:creator

• Vijayaraghavan, Rangarajan, M. Eng. Massachusetts Institute of Technology

Advisor dc:contributor.advisor

• Caroline A. Ross.

• Materials Science and Engineering.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/37679

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/37679