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Massachusetts Institute of Technology

Analysis of slurry flow in chemical-mechanical polishing

Abstract

dc:description.abstract

Chemical-Mechanical Polishing (CMP) is one of the enabling processes used in the manufacture of semiconductor chips. In the relentless progress to make computer chips faster, smaller, and cheaper, the CMP process plays a prominent role. One of its limitations, however, is non-uniform polishing rate at the die and wafer scales. In this thesis, an innovative CMP machine configuration is proposed to minimize wafer-scale non-uniformity. The new face-up machine lowers wafer-scale non-uniformity by minimizing over-polishing of any particular area. The thesis discusses the kinematics and design considerations of this machine. Additionally, this thesis develops an analytical model for slurry flow in CMP in two steps. First, a simple but useful method of estimating the effective gap between the wafer and the pad during polishing is developed. The method uses pressurized fluid flow and an analytical model to estimate the effective gap between the wafer and the pad. Second, this effective gap is used in the Couette model that describes the slurry behavior in CMP. The Couette model shows that rotational speeds of the wafer and pad, the effective gap, and the sizes of the wafer and pad dictate the slurry flow rate and flow pattern in both conventional CMP and the new face-up CMP. The Couette model can be used to estimate the slurry flow rate whenever the process parameters are changed.

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Dept. of Mechanical Engineering.
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
2005

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Kopanski, Krzysztof D
Advisor dc:contributor.advisor
  • Jung-Hoon Chun and Nannaji Saka.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
eng

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/1721.1/32353
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/32353

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
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citation

Kopanski, Krzysztof D. Analysis of slurry flow in chemical-mechanical polishing. Massachusetts Institute of Technology, 2005. http://hdl.handle.net/1721.1/32353