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Massachusetts Institute of Technology

Modelling for transient optically induced metal-insulator transitions in narrow-gap semiconductors and semimetals

Abstract

dc:description

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1994.

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Dept. of Physics
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
1994

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Vidal, Jordina
Advisor dc:contributor.advisor
  • Mildred S. Dresselhaus.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
eng

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/1721.1/17361
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/17361

Chain of custody

source
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MIT
Base URL
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Last updated
2026-07-22
Source record
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citation

Vidal, Jordina. Modelling for transient optically induced metal-insulator transitions in narrow-gap semiconductors and semimetals. Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/17361