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Massachusetts Institute of Technology

Thermal annealing effects on boron-implanted HgCdTe diodes

Abstract

dc:description

Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1988.

Degree

thesis:*
Name thesis:degree_name
Master
Department dc:contributor.department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
1988

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Syz, Jing-Kai.
Advisor dc:contributor.advisor
  • Robert H. Kingston.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • MIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.

Identifiers

dc:identifier.*
Handle dc:identifier.uri
https://hdl.handle.net/1721.1/129636
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/129636

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Syz, Jing-Kai.. Thermal annealing effects on boron-implanted HgCdTe diodes. Massachusetts Institute of Technology, 1988. https://hdl.handle.net/1721.1/129636