Defect-driven processing of two-dimensional transition metal dichalcogenides

Two-dimensional transition metal dichalcogenides (TMDs) are an emerging class of semiconductor materials that offer exciting new properties for future electronic and optoelectronic applications. However, many ongoing challenges related to synthesis and processing must be overcome before this nascent technology can become industrially viable. In this thesis, processing-related phenomena relevant to the fabrication of TMD heterostructures, alloys, and nanoporous membranes are presented. This thesis begins with an investigation of the role of substrate temperature in two-step chemical vapor deposition (CVD) growth of MoS₂/WS₂ heterostructures. We demonstrate diffusion-mediated synthesis of inverted lateral heterostructures following low MoS2 growth temperatures in the second CVD step and homogeneous Mo[subscript x]W[subscript 1-x]S₂ alloyed crystals following higher MoS₂ growth temperatures.

Name thesis:degree_name

Doctoral

Department dc:contributor.department

Massachusetts Institute of Technology. Department of Materials Science and Engineering

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2019

Author dc:creator

• Bogaert, Kevin Christopher.

Advisor dc:contributor.advisor

• Silvija Gradečak.

• Materials Science and Engineering.

Statement dc:rights

• MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

https://hdl.handle.net/1721.1/122072

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/122072