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Massachusetts Institute of Technology

Artificial atoms and electron puddles : single and double barriers in a silicon MOS system

Abstract

dc:description

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1997.

Degree

thesis:*
Department dc:contributor.department
Massachusetts Institute of Technology. Dept. of Physics
Grantor dc:publisher
Massachusetts Institute of Technology
Year dc:date.issued
1997

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Abusch-Magder, David, 1969-
Advisor dc:contributor.advisor
  • Marc A. Kastner.

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Language dc:language.iso
eng

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/1721.1/10184
OAI identifier oai:identifier
oai:dspace.mit.edu:1721.1/10184

Chain of custody

source
Harvested from
MIT
Base URL
dspace.mit.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
related terms
citation

Abusch-Magder, David, 1969-. Artificial atoms and electron puddles : single and double barriers in a silicon MOS system. Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/10184